When the device is used as an emitter follower with a low source. Inchange semiconductor product specification silicon npn power transistors 2sc25 description with to3 package high voltage,high speed applications designed for use in large screen color. Mitsubishi rf power transistor 2sc24 npn epitaxial planar type description 2sc24 is a silicon npn epitaxial planar type transistor designed for industrial use rf broadband amplifiers from vhf, d itio n s are subjegt to c h a n g e. Recent listings manufacturer directory get instant. Refer to jedec specification jesd22a114 and jesd22a115. Npn epitaxial planar typebroadband amplifiers from vhf to uhf band online from elcodis, view and download 2sc24 pdf datasheet, transistors specifications. Audio and general purpose symbol v cbo vceo vebo ic ib pc tj tstg ratings 230 230 5 17 5 200tc25c.
Elektronische bauelemente npn plastic encapsulated. The revised points can be easily searched by copying an in the pdf file and specifying it in the find what. Satisfactory operation performances at high efficiency with the lowvoltage power supply. February 2003 sjd00094bed 1 2sc1846 silicon npn epitaxial planar type for medium output power amplification complementary to 2sa0885 features low collectoremitter saturation voltage v cesat output of 3 w can be obtained by a complementary pair with 2sa0885. Toshiba transistor silicon npn epitaxial planar type pct process 2sc1923 high frequency amplifier applications fm, rf, mix, if amplifier applications small reverse transfer capacitance. Select the part name and then you can download the datasheet in pdf. Vceo250vmin applications for voltage regulator,inverter,switching mode power supply applications. Npn epitaxial planar typefor industrial use rf power amplifiers on vhf band mobile radio applications, 2sc1946 pdf download new jersey semiconductor, 2sc1946 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits. Description with to202 package complement to type 2sc1096 high current capability applications audio frequency power amplifier low speed switching pinningsee fig. February 2003 sjd00094bed 1 2sc1846 silicon npn epitaxial planar type for medium output power amplification complementary to 2sa0885 features low collectoremitter saturation voltage v cesat output of 3 w can be obtained by a.
A listing of scillcs productpatent coverage may be accessed at. Select the part name and then you can download the datasheet in pdf format. Productrank 2sc1923o 2sc1923y range 70140 100200 marking absolute maximum ratings ta25c unless otherwise specified parameter symbol rating unit collector to base voltage vcbo 40 v collector to emitter voltage vceo 30 v emitter to base voltage vebo 4 v collector current continuous ic 20 ma collector power dissipation pc 100 mw. Vceo 50 v min, ic 150 ma max excellent hfe linearity. Hitachi, alldatasheet, datasheet, datasheet search site for electronic. Silicon npn epitaxial planer typefor lowfrequency power amplification and driver amplification, 2sc84 datasheet, 2sc84 circuit, 2sc84 data sheet. Panasonic, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. This entry was posted in datasheet and tagged 2sc2120. Scr datasheet, scr pdf, scr data sheet, scr manual, scr pdf, scr, datenblatt, electronics scr, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets. Lp395 ultra reliable power transistor datasheet texas instruments. Typical values contained in this datasheet are based on simulations and characterization of actual atmega328p avr microcontrollers manufactured on the typical process technology. Savantic semiconductor product specification silicon npn power transistors 2sc3182 description with to3pi package complement to type 2sa1265 applications power amplifier applications recommend for 70w high fidelity audio frequency amplifier output stage pinning pin description 1base 2 collector. Audio and general purpose symbol vcbo vceo vebo ic ib pc tj tstg ratings 160 120 6 8 3 80tc25c.
Inchange semiconductor product specification silicon npn power transistors 2sc1433 description with to3 package high voltage,high speed applications for high voltage switching power amplifier applications pinningsee fig. Mjd340 high voltage power transistors on semiconductor. Transistor 2sc83, 2sc84 silicon npn epitaxial planer type for lowfrequency power amplification and driver amplification complementary to 2sa683 and 2sa684 features low collector to emitter saturation voltage vcesat. Recent listings manufacturer directory get instant insight into any electronic component. Irf2805pbf product data sheet infineon technologies. Toshiba transistor silicon npn epitaxial type pct process. Complementary low voltage transistor stmicroelectronics. Datasheet pdf download other data sheets within the file. Toshiba transistor silicon npn epitaxial planar type pct. Preliminary ne85630 2sc4226 data sheet npn silicon rf transistor npn epitaxial silicon rf transistor for highfrequency lownoise amplification 3pin super minimold description. Audio and general purpose symbol vcbo vceo vebo ic ib pc tj tstg ratings 160 120 6. Description with to220 package high power dissipation applications power amplifier and medium speed switching applications pinning pin description 1base 2 collector. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications.